MYSTERIES OF GAN

Authors

  • M. Godlewski

Abstract

Despite of all successes in commercialization of GaN-based devices present knowledge of light emission mechanisms in these devices is surprisingly limited. In my talk I discussed several puzzling properties of wide band gap nitrides. Some of them are briefly described below. First, I discuss correlations between structural quality of thin films of GaN and their light emission properties. Then, the mechanisms responsible for strong carrier/excitons localization effects are discussed. Finally, I discuss properties of n- and p-type doped GaN layers.

Published

2018-12-04

How to Cite

1.
Godlewski M. MYSTERIES OF GAN. TUJ-BA [Internet]. 2018Dec.4 [cited 2020Oct.30];27(2). Available from: http://journal.tishreen.edu.sy/index.php/bassnc/article/view/4976