التلف الحاصل للخلايا الشمسية نتيجة تعريضها للتشعيع بالإلكترونات
Abstract
يتناول هذا البحث التلف الحاصل للخلايا الشمسية نتيجةً لتعرضها للتشعيع بالإلكترونات. قمنا بتعريض هذه الخلايا لحزم من الإلكترونات ذات تدفق متغير لخلق عيوب فيها تلعب دوراً أساسياً كمراكز إعادة اتحاد غير مشعة (non-radiative recombination centers (.
وسعينا لخلق نفس الظروف التي تتعرض لها الخلية الشمسية في الفضاء الخارجي, ثم درسنا التغيرات التي تطرأ على الخصائص الفولطية الضوئية لهذه الخلايا.
بينت القياسات أن جهد الدارة المفتوحة لخلية شمسية GaAs يتغير بتابعية جرعة التشعيع الإلكتروني والتي تقع ضمن المجال:
2x1012elec.cm-2 < < 5x1015 elec.cm-2
ووجدنا أنه يساوي:
Voc = 1.22-0.04 log V
Voc = 2.39-0.12 log V
لكل من منطقتي الانتشار وإعادة الاتحاد على الترتيب.
وقد وجدنا أن كثافة تيار الدارة المقصورة Jsc تتغير مع تغير جرعة التشعيع الإلكتروني وفق العلاقة:
mA.cm-2 Jsc =62.47-3.45 log
يظهر تلف الخلايا الشمسية التي درسناها في تناقص الاستطاعة العظمى لها نتيجة تزايد .
تم إجراء القياسات في مختبر الأوساط غير المنتظمة واللامتجانسة, جامعة بيير وماري كوري (باريس VI) فرنسا عام 2002, 2001
This article deals with the degradation of solar cells induced by electron irradiation. We have exposed GaAs solar cells to different doses of accelerated electrons to create defects, which play an important role as non-radiative recombination centers.
We try to achieve the same conditions to which the solar cells are exposed to in outer space. We have studied the variation of the photovoltaic characteristics of these cells versus electron flux.
We found out that the open – circuit voltage of GaAs solar cells varies with the electron irradiation dose j, which we varied in the interval:
2x1012 elec.cm-2 < j <5x1015 elec.cm-2
and we found out that:
Voc = 1.22 - 0.04 log j V
Voc = 2.39 - 0.12 log j V
for both, the diffusion and the recombination zones respectively.
The density of the short-circuit current has been measured and we found that the current varies with the electron irradiation dose, according to the relation:
Jsc = 62.47 - 3.45 log j mA.cm-2
The degradation of solar cells appears from the decrease of the maximum power when () increases.
Downloads
Published
How to Cite
Issue
Section
License

This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
The authors retain the copyright and grant the right to publish in the magazine for the first time with the transfer of the commercial right to the Tishreen University Journal -Basic Sciences Series
Under a CC BY- NC-SA 04 license that allows others to share the work with of the work's authorship and initial publication in this journal. Authors can use a copy of their articles in their scientific activity, and on their scientific websites, provided that the place of publication is indicted in Tishreen University Journal -Basic Sciences Series . The Readers have the right to send, print and subscribe to the initial version of the article, and the title of Tishreen University Journal -Basic Sciences Series Publisher
journal uses a CC BY-NC-SA license which mean
You are free to:
- Share — copy and redistribute the material in any medium or format
- Adapt — remix, transform, and build upon the material
- The licensor cannot revoke these freedoms as long as you follow the license terms.
- Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
- NonCommercial — You may not use the material for commercial purposes.
- ShareAlike — If you remix, transform, or build upon the material, you must distribute your contributions under the same license as the original.
- No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.