دراسة الثنائيات (الديودات) من نوع GaAs (p-i-n) المستخدمة ككواكشف لأشعة X بغية تحسين آدائها.
Abstract
إن استخدام الثنائيات (الديودات) من نوع GaAs (p-i-n) ككواشف للفوتونات عالية الطاقة تقتضي زيادة سماكة منطقة الفراغ W حيث توجد الشحنة، وتلك المنطقة تحدد بالشوائب المتبقية لنصف الناقل. سوف نتحدث عن التقانة المستخدمة في زيادة سماكة منطقة الشحنة الفراغية W. ويقتضي هذا تعديل الشوائب المتبقية بتشكل عيوب عن طريق التشعيع بالإلكترونات.
تمت دراسة التيار والسعة بتابعية الجهد المطبق على الكاشف GaAs (p-i-n). توضح النتائج التي حصلنا عليها حدود التقنية المستخدمة في حالة هذا النوع من الكواشف.
The detection of high-energy photons, using compound semiconductor detectors such as GaAs (p-i-n), requires an increase of the depleted zone W, which is limited by the residual doping of the semiconductor.
In this paper, we will discuss a technique by which the extension of the space charge region of a diode can be increased. It consists in compensating the residual doping impurities with defects introduced by electrons irradiation. We have studied the current and capacitance-voltage characteristics of GaAs (p-i-n) structures.
Results are presented to illustrate and evaluate the limits of this technique in the case of GaAs (p-i-n) structures.
Downloads
Published
How to Cite
Issue
Section
License
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
The authors retain the copyright and grant the right to publish in the magazine for the first time with the transfer of the commercial right to the Tishreen University Journal -Basic Sciences Series
Under a CC BY- NC-SA 04 license that allows others to share the work with of the work's authorship and initial publication in this journal. Authors can use a copy of their articles in their scientific activity, and on their scientific websites, provided that the place of publication is indicted in Tishreen University Journal -Basic Sciences Series . The Readers have the right to send, print and subscribe to the initial version of the article, and the title of Tishreen University Journal -Basic Sciences Series Publisher
journal uses a CC BY-NC-SA license which mean
You are free to:
- Share — copy and redistribute the material in any medium or format
- Adapt — remix, transform, and build upon the material
- The licensor cannot revoke these freedoms as long as you follow the license terms.
- Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
- NonCommercial — You may not use the material for commercial purposes.
- ShareAlike — If you remix, transform, or build upon the material, you must distribute your contributions under the same license as the original.
- No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.