تحديد ارتفاع حاجز شوتكي لديود ملدن وغير ملدن Ni – n-GaAs بوساطة المميزات السعوية(C-V)

Authors

  • رزق محمد قرفول

Abstract

تمت في هذا البحث دراسة المميزات السعوية C-V لديودات شوتكي الملدنة و غير الملدنة من النوع Ni-n-GaAs عند درجة حرارة  300K قبل و بعد قذفها بطاقات ليزرية مختلفة. تمّ حساب تركيز الشوائب المانحة في قاعدة الديود فكانت قيمها تتراوح بين 0.65×1015)cm-3 - 0.63×1015) في الديودات غير الملدنة ،  بينما كانت قيمها تتراوح بين  0.94×1015 – 1.08×1015) cm-3) في الديودات الملدنة و تزايدت السعة مع زيادة طاقة الجرعات الليزرية في الديودات غير الملدنة بينما تناقصت في الديودات الملدنة . كذلك تمّ حساب ارتفاع حاجز شوتكي في الديودات غير الملدنة فكانت تتراوح بين V( 0.708 - 0.688) أما في الديودات الملدنة فكانت تتراوح بين
0.87)V - 0.79) و أخيراّ تم مقارنة هذا الارتفاع  مع قيمته المحسوبة وفقاً لنظرية شوتكي فكانت النتائج متقاربة .

In this research ,the characteristics C-V were studied for annealed and non- annealed Schottky diodes of Ni-n-GaAs type at 300K temperature before and after irradiation by different laser energies. Donor impurities concentration in the diode substrate was calculated and it ranged between (0,63 ×1015 -0,65×1015) cm-3 in non-annealed diodes. While it was ranged between(1.08×1015-0.94×1015 )cm-3 in annealed diodes. The capacity increased by the increase of the laser doses in the non-annealed diodes while it decreased in annealed diodes. In addition to, Schottky barrier height in non-annealed diodes was calculated and it ranged between( 0.708- 0.688)V. While in annealed diodes, it ranged between (0.79 -0.87)V. Finally this height was calculated according to Schottky theory and the results were very  close.

 

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Published

2014-06-26

How to Cite

1.
قرفول رم. تحديد ارتفاع حاجز شوتكي لديود ملدن وغير ملدن Ni – n-GaAs بوساطة المميزات السعوية(C-V). TUJ-BA [Internet]. 2014Jun.26 [cited 2025Apr.10];36(3). Available from: https://journal.tishreen.edu.sy/index.php/bassnc/article/view/887

Issue

Vol. 36 No. 3 (2014): العلوم الأساسية

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