Identification of Deep Defects by Positron Annihilation Spectroscopy in Annealed GaAs Thin Films

Authors

  • Ayham Dalla Tishreen University

Abstract

Positron annihilation spectroscopy was applied to investigate the defect properties in GaAs thin films at different annealing temperature. Positron lifetime and Doppler broadening spectroscopy using mono-energetic positron beam were used to identify the defects in the GaAs films. Theoretical calculations of the positron lifetime were performed. DBS measurements showed, that with increasing the annealing temperature increases the deep defect density. Lifetime measurements confirmed this result. The decomposition of the lifetime spectra of the samples resulted in the detection of two vacancy-related defects: a vacancy 3  or 3  (annealing temperature is less than 650 K) and a negatively charged vacancy complex  (annealing temperature is more than 650 K). Furthermore, Lifetime measurements interpreted the presence of large cluster of vacancies by the near-surface defective regions.

 

Author Biography

Ayham Dalla, Tishreen University

Doctor, Department of  Physics, Faculty of science

Downloads

Published

2021-03-30

How to Cite

1.
دلا ا. Identification of Deep Defects by Positron Annihilation Spectroscopy in Annealed GaAs Thin Films. TUJ-BA [Internet]. 2021Mar.30 [cited 2025Mar.7];43(1). Available from: https://journal.tishreen.edu.sy/index.php/bassnc/article/view/10470

Issue

Vol. 43 No. 1 (2021): Tishreen University Journal for Research and Scientific Studies - Basic Sciences Series

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.

The authors retain the copyright and grant the right to publish in the magazine for the first time with the transfer of the commercial right to the Tishreen University Journal -Basic Sciences Series  

 Under a CC BY- NC-SA 04 license that allows others to share the work with of the work's authorship and initial publication in this journal. Authors can use a copy of their articles in their scientific activity, and on their scientific websites, provided that the place of publication is indicted in Tishreen University Journal -Basic Sciences Series .  The Readers have the right to send, print and subscribe to the initial version of the article, and the title of Tishreen University Journal -Basic Sciences Series   Publisher

 

journal uses a CC BY-NC-SA license which mean

You are free to:

  • Adapt — remix, transform, and build upon the material
  •  
  • The licensor cannot revoke these freedoms as long as you follow the license terms.

 

  • Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
  • NonCommercial — You may not use the material for commercial purposes.
  • ShareAlike — If you remix, transform, or build upon the material, you must distribute your contributions under the same license as the original.
  • No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.