Preparation and study of TiN nanostructured thin films by DC reactive magnetron sputtering with different mixing ratios of Ar:N2

Authors

  • رهف ضعون Tishreen University
  • Adnan Mini Tishreen University
  • Mohammad Karman Aleppo University

Abstract

Titanium nitride nanostructured thin films TiN were deposited at three different nitrogen ratio    (10, 25, 50) % on unheated glass substrates using direct current DC reactive magnetron sputtering. These films were obtained with thicknesses (90,171,264) nm respectively. The structural, morphological, optical and electrical properties of these thin films were studied. X-ray diffraction (XRD) patterns showed an amorphous phase. Atomic Force Microscopy (AFM) measurements showed that the deposited thin films have a nanostructure, according to heights of their grains. An increase in  roughness of the films was also observed with the increase in the nitrogen content. Spectroscopic analysis shows that the transmittance of films decrease with the increase of both nitrogen content and thickness of films. The values of the direct energy gap ranged between (3.57-3.33) eV. Photoluminescence emission of maximum intensity was obtained for the film deposited at 25% N2. Impedance measurements showed that films resistance did not change with the change of nitrogen content. 

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Published

2022-09-15

How to Cite

1.
ضعون ر, عدنان ميني, محمد بشير كرمان. Preparation and study of TiN nanostructured thin films by DC reactive magnetron sputtering with different mixing ratios of Ar:N2. TUJ-BA [Internet]. 2022Sep.15 [cited 2024Nov.24];44(4):81-95. Available from: https://journal.tishreen.edu.sy/index.php/bassnc/article/view/11947

Issue

Vol. 44 No. 4 (2022): Tishreen University Journal of Research and Scientific Studies - Basic Sciences Series

Section

Master student researches

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